1/7 www.dynexsemi.com DFM1200FXM18-A000 features low reverse recovery charge high switching speed low forward voltage drop isolated base dual diodes can be paralleled for 2400a rating mmc baseplate with aln substrates applications brake chopper diode boost and buck converters free-wheel circuits motor drives resonant converters induction heating multi-level switch inverters the DFM1200FXM18-A000 is a dual 1800 volt, fast recovery diode (frd) module. designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. these modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ordering information order as: DFM1200FXM18-A000 note: when ordering, please use the complete part number. DFM1200FXM18-A000 fast recovery diode module ds5420-1.5 april 2001 key parameters v rrm 1800v v f (typ) 2.0v i f (max) 1200a i fm (max) 2400a fig. 1 dual diode circuit diagram fig. 2 electrical connections - (not to scale) outline type code: f (see package details for further information) 13 2 4 2(c2) 1(c1) 3(a1) 4(a2) external connection external connection external connection for single 2400a diode application
DFM1200FXM18-A000 2/7 www.dynexsemi.com units v a a ka 2 s w kv pc absolute maximum ratings - per arm stresses above those listed under 'absolute maximum ratings' may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25?c unless stated otherwise symbol v rrm i f i fm i 2 t pmax v isol q pd test conditions t vj = 125?c dc, t case = 75?c, t vj = 125?c t case = 110?c, t p = 1ms v r = 0, t p = 10ms, t vj = 125?c t case = 25?c, t vj = 125?c commoned terminals to base plate. ac rms, 1 min, 50hz iec1287. v 1 = 1500v, v 2 = 1100v, 50hz rms max. 1800 1200 2400 480 5000 4.0 10 parameter repetitive peak reverse voltage forward current (per arm) max. forward current i 2 t value fuse current rating maximum power dissipation isolation voltage partial discharge test conditions continuous dissipation - junction to case mounting torque 5nm (with mounting grease) - - mounting - m6 electrical connections - m8 parameter thermal resistance - diode (per arm) thermal resistance - case to heatsink (per module) junction temperature storage temperature range screw torque thermal and mechanical ratings symbol r th(j-c) r th(c-h) t j t stg - units ?c/kw ?c/kw ?c ?c nm nm max. 20 8 125 125 5 10 typ. - - - - - - min. - - - ?0 - - internal insulation: aln baseplate material: alsic creepage distance: 20mm clearance: 10mm cti (critical tracking index): 175
3/7 www.dynexsemi.com DFM1200FXM18-A000 test conditions i f = 1200a, di f /dt = 8000a/ s, v r = 900v parameter peak reverse recovery current reverse recovery charge reverse recovery energy symbol i rr q rr e rec units a c mj max. - - - typ. 880 320 240 min. - - - dynamic electrical characteristics - per arm t vj = 25?c unless stated otherwise. t vj = 125?c unless stated otherwise. test conditions i f = 1200a, di f /dt = 8000a/ s, v r = 900v parameter peak reverse recovery current reverse recovery charge reverse recovery energy symbol i rr q rr e rec units a c mj max. - - - typ. 1020 540 360 min. - - - test conditions v r = 1800v, t vj = 125?c i f = 1200a i f = 1200a, t vj = 125?c - parameter peak reverse current forward voltage inductance static electrical characteristics - per arm t vj = 25?c unless stated otherwise. symbol i rm v f l units ma v v nh max. 20 2.3 2.3 - typ. - 2.0 2.0 20 min. - - - - static electrical characteristics t vj = 25?c unless stated otherwise. test conditions - parameter module inductance (externally connected in parallel) symbol l m units nh max. - typ. 15 min. -
DFM1200FXM18-A000 4/7 www.dynexsemi.com typical characteristics fig. 2 diode typical forward characteristics fig. 4 transient thermal impedance fig. 5 power dissipation fig. 6 dc current rating vs case temperature 0 400 800 1200 1600 2000 2400 2800 3200 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 foward volta g e, v f - ( v ) foward current, i f - (a) t j = 125 ? c t j = 25 ? c 1 10 100 0.001 0.01 1 0.1 10 pulse width, t p - (s) transient thermal impedance, z th (j-c) - ( c/kw ) r i (?c/kw) i ( ms) 1 0.8 0.0066332 2 2.7416 1.4384 3 3.4916 12.8758 4 12.9568 110.2138 0 2000 4000 6000 2000 3000 5000 0 20 40 60 80 100 120 140 160 case temperature, t case - ( ? c) power dissipation, p tot - (w) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 20 40 60 80 100 120 140 160 case temperature, t case - ( ? c) dc forward current, i f - (a)
5/7 www.dynexsemi.com DFM1200FXM18-A000 fig. 7 rbsoa 0 200 400 600 800 1000 1200 1400 1600 0 400 800 1200 1600 2000 reverse voltage, v r - (v) reverse recovery current, i rr - (a) t j = 125 ? c
DFM1200FXM18-A000 6/7 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. 140 31.5 4x m8 5 38 20 43.3 18 57 57 65 65 6x 7 15 15 1 3 2 4 62 62 main terminal screw plastic hole depth (m8) = 16.8 0.3 copper terminal thickness, main terminal pins = 1.5 0.1 nominal weight: 1050g module outline type code: f
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
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